Öztürk, O. Et Al. 2018. Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration. 5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , (Nevşehir, Turkey), 308.

Öztürk, O., Öztürk, E., & Elagöz, S., (2018). Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration . 5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) (pp.308). Nevşehir, Turkey

Öztürk, OZAN, EMİNE ÖZTÜRK, And SEZAİ ELAGÖZ. "Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration," 5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , Nevşehir, Turkey, 2018

Öztürk, OZAN Et Al. "Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration." 5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , Nevşehir, Turkey, pp.308, 2018

Öztürk, O. Öztürk, E. And Elagöz, S. (2018) . "Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration." 5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) , Nevşehir, Turkey, p.308.

@conferencepaper{conferencepaper, author={OZAN ÖZTÜRK Et Al. }, title={Electronic characteristics of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration}, congress name={ 5th International Conference on Materials Science and Advanced-Nanotechnologies For Next Generation (MSNG-2018) }, city={Nevşehir}, country={Turkey}, year={2018}, pages={308} }