Ozturk, E. Et Al. 2003. Influence of temperature on the electronic properties of Si delta-doped GaAs structures. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.21, no.2 , 97-101.

Ozturk, E., Ergun, Y., Sari, H., & Sokmen, I., (2003). Influence of temperature on the electronic properties of Si delta-doped GaAs structures. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.21, no.2, 97-101.

Ozturk, EMİNE Et Al. "Influence of temperature on the electronic properties of Si delta-doped GaAs structures," EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.21, no.2, 97-101, 2003

Ozturk, EMİNE Et Al. "Influence of temperature on the electronic properties of Si delta-doped GaAs structures." EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.21, no.2, pp.97-101, 2003

Ozturk, E. Et Al. (2003) . "Influence of temperature on the electronic properties of Si delta-doped GaAs structures." EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.21, no.2, pp.97-101.

@article{article, author={EMİNE ÖZTÜRK Et Al. }, title={Influence of temperature on the electronic properties of Si delta-doped GaAs structures}, journal={EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS}, year=2003, pages={97-101} }