DEMİR, İ. Et Al. 2018. Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.33, no.5 .

DEMİR, İ., ALTUNTAŞ, İ., Bulut, B., Ezzedini, M., ERGÜN, Y., & ELAGÖZ, S., (2018). Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.33, no.5.

DEMİR, İLKAY Et Al. "Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.33, no.5, 2018

DEMİR, İLKAY Et Al. "Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.33, no.5, 2018

DEMİR, İ. Et Al. (2018) . "Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.33, no.5.

@article{article, author={İLKAY DEMİR Et Al. }, title={Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2018}