Ungan, F. Et Al. 2011. Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field. EUROPEAN PHYSICAL JOURNAL B , vol.82 , 313-318.

Ungan, F., Kasapoglu, E., Sari, H., & Sokmen, I., (2011). Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field. EUROPEAN PHYSICAL JOURNAL B , vol.82, 313-318.

Ungan, FATİH Et Al. "Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field," EUROPEAN PHYSICAL JOURNAL B , vol.82, 313-318, 2011

Ungan, FATİH Et Al. "Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field." EUROPEAN PHYSICAL JOURNAL B , vol.82, pp.313-318, 2011

Ungan, F. Et Al. (2011) . "Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field." EUROPEAN PHYSICAL JOURNAL B , vol.82, pp.313-318.

@article{article, author={FATİH UNGAN Et Al. }, title={Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field}, journal={EUROPEAN PHYSICAL JOURNAL B}, year=2011, pages={313-318} }