Ozturk, E. And Sokmen, I. 2003. Intersubband transitions for single, double and triple Si delta-doped GaAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.36, no.20 , 2457-2464.

Ozturk, E., & Sokmen, I., (2003). Intersubband transitions for single, double and triple Si delta-doped GaAs layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.36, no.20, 2457-2464.

Ozturk, EMİNE, And I Sokmen. "Intersubband transitions for single, double and triple Si delta-doped GaAs layers," JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.36, no.20, 2457-2464, 2003

Ozturk, EMİNE And Sokmen, I. "Intersubband transitions for single, double and triple Si delta-doped GaAs layers." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.36, no.20, pp.2457-2464, 2003

Ozturk, E. And Sokmen, I. (2003) . "Intersubband transitions for single, double and triple Si delta-doped GaAs layers." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.36, no.20, pp.2457-2464.

@article{article, author={EMİNE ÖZTÜRK And author={I Sokmen}, title={Intersubband transitions for single, double and triple Si delta-doped GaAs layers}, journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS}, year=2003, pages={2457-2464} }