ALTUNTAŞ, İ. Et Al. 2018. Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate. 19th World Congress on Materials Science and Engineering .

ALTUNTAŞ, İ., DEMİR, İ., KIZILBULUT, A. A., Bulut, B., & ELAGÖZ, S., (2018). Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate . 19th World Congress on Materials Science and Engineering

ALTUNTAŞ, İSMAİL Et Al. "Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate," 19th World Congress on Materials Science and Engineering, 2018

ALTUNTAŞ, İSMAİL Et Al. "Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate." 19th World Congress on Materials Science and Engineering , 2018

ALTUNTAŞ, İ. Et Al. (2018) . "Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate." 19th World Congress on Materials Science and Engineering .

@conferencepaper{conferencepaper, author={İSMAİL ALTUNTAŞ Et Al. }, title={Comprehensive comparison of epitaxially grown GaN layer grown on conventional sapphire and patterned sapphire substrate}, congress name={19th World Congress on Materials Science and Engineering}, city={}, country={}, year={2018}}