ÖZTÜRK, O. Et Al. 2020. Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration. Cumhuriyet Science Journal , vol.41, no.3 , 565-570.

ÖZTÜRK, O., ÖZTÜRK, E., & ELAGOZ, S., (2020). Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration. Cumhuriyet Science Journal , vol.41, no.3, 565-570.

ÖZTÜRK, OZAN, EMİNE ÖZTÜRK, And SEZAİ ELAGOZ. "Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration," Cumhuriyet Science Journal , vol.41, no.3, 565-570, 2020

ÖZTÜRK, OZAN Et Al. "Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration." Cumhuriyet Science Journal , vol.41, no.3, pp.565-570, 2020

ÖZTÜRK, O. ÖZTÜRK, E. And ELAGOZ, S. (2020) . "Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration." Cumhuriyet Science Journal , vol.41, no.3, pp.565-570.

@article{article, author={OZAN ÖZTÜRK Et Al. }, title={Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration}, journal={Cumhuriyet Science Journal}, year=2020, pages={565-570} }