ÜNSAL ÇELİMLİ, D. B. Et Al. 2016. ABC Artificial Bee Colony method analysis for the Capacitance Voltage characteristics of Ni n GaAS In schottky barrier diode. NANOTR12 , (İzmit, Turkey).

ÜNSAL ÇELİMLİ, D. B., DOĞAN, H., & KOÇKANAT, S., (2016). ABC Artificial Bee Colony method analysis for the Capacitance Voltage characteristics of Ni n GaAS In schottky barrier diode . NANOTR12, İzmit, Turkey

ÜNSAL ÇELİMLİ, DERYA, HÜLYA DOĞAN, And SERDAR KOÇKANAT. "ABC Artificial Bee Colony method analysis for the Capacitance Voltage characteristics of Ni n GaAS In schottky barrier diode," NANOTR12, İzmit, Turkey, 2016

ÜNSAL ÇELİMLİ, DERYA B. Et Al. "ABC Artificial Bee Colony method analysis for the Capacitance Voltage characteristics of Ni n GaAS In schottky barrier diode." NANOTR12 , İzmit, Turkey, 2016

ÜNSAL ÇELİMLİ, D. B. DOĞAN, H. And KOÇKANAT, S. (2016) . "ABC Artificial Bee Colony method analysis for the Capacitance Voltage characteristics of Ni n GaAS In schottky barrier diode." NANOTR12 , İzmit, Turkey.

@conferencepaper{conferencepaper, author={DERYA BETÜL ÜNSAL ÇELİMLİ Et Al. }, title={ABC Artificial Bee Colony method analysis for the Capacitance Voltage characteristics of Ni n GaAS In schottky barrier diode}, congress name={NANOTR12}, city={İzmit}, country={Turkey}, year={2016}}