Alaydin, B. Ö. Et Al. 2018. Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells. INTERNATIONAL JOURNAL OF MODERN PHYSICS B , vol.32, no.5 .

Alaydin, B. Ö., Ozturk, E., & Elagoz, S., (2018). Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells. INTERNATIONAL JOURNAL OF MODERN PHYSICS B , vol.32, no.5.

Alaydin, BEHÇET, EMİNE ÖZTÜRK, And S. Elagoz. "Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells," INTERNATIONAL JOURNAL OF MODERN PHYSICS B , vol.32, no.5, 2018

Alaydin, BEHÇET Ö. Et Al. "Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells." INTERNATIONAL JOURNAL OF MODERN PHYSICS B , vol.32, no.5, 2018

Alaydin, B. Ö. Ozturk, E. And Elagoz, S. (2018) . "Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells." INTERNATIONAL JOURNAL OF MODERN PHYSICS B , vol.32, no.5.

@article{article, author={BEHÇET ÖZGÜR ALAYDİN Et Al. }, title={Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells}, journal={INTERNATIONAL JOURNAL OF MODERN PHYSICS B}, year=2018}