Ungan, F. Et Al. 2010. Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells. PHYSICS LETTERS A , vol.374, no.29 , 2980-2984.

Ungan, F., Yesilgul, U., Sakiroglu, S., Kasapoglu, E., Sari, H., & Sokmen, I., (2010). Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells. PHYSICS LETTERS A , vol.374, no.29, 2980-2984.

Ungan, FATİH Et Al. "Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells," PHYSICS LETTERS A , vol.374, no.29, 2980-2984, 2010

Ungan, FATİH Et Al. "Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells." PHYSICS LETTERS A , vol.374, no.29, pp.2980-2984, 2010

Ungan, F. Et Al. (2010) . "Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells." PHYSICS LETTERS A , vol.374, no.29, pp.2980-2984.

@article{article, author={FATİH UNGAN Et Al. }, title={Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells}, journal={PHYSICS LETTERS A}, year=2010, pages={2980-2984} }