Ozturk, E. Et Al. 2003. Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.77 , 427-431.

Ozturk, E., Ergun, Y., Sari, H., & Sokmen, I., (2003). Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.77, 427-431.

Ozturk, EMİNE Et Al. "Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness," APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.77, 427-431, 2003

Ozturk, EMİNE Et Al. "Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.77, pp.427-431, 2003

Ozturk, E. Et Al. (2003) . "Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.77, pp.427-431.

@article{article, author={EMİNE ÖZTÜRK Et Al. }, title={Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, year=2003, pages={427-431} }