Ungan, F. Et Al. 2019. Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field. JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6 , 3537-3546.

Ungan, F., Mora-Ramos, M. E., Sari, H., & Sokmen, I., (2019). Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field. JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, 3537-3546.

Ungan, FATİH Et Al. "Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field," JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, 3537-3546, 2019

Ungan, FATİH Et Al. "Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field." JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, pp.3537-3546, 2019

Ungan, F. Et Al. (2019) . "Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field." JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.6, pp.3537-3546.

@article{article, author={FATİH UNGAN Et Al. }, title={Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field}, journal={JOURNAL OF ELECTRONIC MATERIALS}, year=2019, pages={3537-3546} }