Öztürk, O. Et Al. 2018. Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells. 4th International Conference on Engineering and Natural Sciences (ICENS-2018) , (Kyyiv, Ukraine), 630-635.

Öztürk, O., Öztürk, E., & Elagöz, S., (2018). Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells . 4th International Conference on Engineering and Natural Sciences (ICENS-2018) (pp.630-635). Kyyiv, Ukraine

Öztürk, OZAN, EMİNE ÖZTÜRK, And SEZAİ ELAGÖZ. "Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells," 4th International Conference on Engineering and Natural Sciences (ICENS-2018) , Kyyiv, Ukraine, 2018

Öztürk, OZAN Et Al. "Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells." 4th International Conference on Engineering and Natural Sciences (ICENS-2018) , Kyyiv, Ukraine, pp.630-635, 2018

Öztürk, O. Öztürk, E. And Elagöz, S. (2018) . "Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells." 4th International Conference on Engineering and Natural Sciences (ICENS-2018) , Kyyiv, Ukraine, pp.630-635.

@conferencepaper{conferencepaper, author={OZAN ÖZTÜRK Et Al. }, title={Depending on Al and In concentration of the electronic properties of asymmetric double GaAlAs/GaAs and GaInAs/GaAs quantum wells}, congress name={ 4th International Conference on Engineering and Natural Sciences (ICENS-2018) }, city={Kyyiv}, country={Ukraine}, year={2018}, pages={630-635} }