Perkitel, I. And DEMİR, İ. 2023. Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE. Journal of Molecular Structure , vol.1272 .

Perkitel, I., & DEMİR, İ., (2023). Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE. Journal of Molecular Structure , vol.1272.

Perkitel, Izel, And İLKAY DEMİR. "Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE," Journal of Molecular Structure , vol.1272, 2023

Perkitel, Izel And DEMİR, İLKAY. "Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE." Journal of Molecular Structure , vol.1272, 2023

Perkitel, I. And DEMİR, İ. (2023) . "Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE." Journal of Molecular Structure , vol.1272.

@article{article, author={Izel Perkitel And author={İLKAY DEMİR}, title={Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE}, journal={Journal of Molecular Structure}, year=2023}