BALCI, M. Et Al. 2013. GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD. 30th INTERNATIONAL PHYSICS CONGRESS .

BALCI, M., BOZ, M. A., DEMİR, İ., ALTUNTAŞ, İ., & ELAGÖZ, S., (2013). GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD . 30th INTERNATIONAL PHYSICS CONGRESS

BALCI, MURAT Et Al. "GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD," 30th INTERNATIONAL PHYSICS CONGRESS, 2013

BALCI, MURAT Et Al. "GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD." 30th INTERNATIONAL PHYSICS CONGRESS , 2013

BALCI, M. Et Al. (2013) . "GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD." 30th INTERNATIONAL PHYSICS CONGRESS .

@conferencepaper{conferencepaper, author={MURAT BALCI Et Al. }, title={GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD}, congress name={30th INTERNATIONAL PHYSICS CONGRESS}, city={}, country={}, year={2013}}