ALTUNTAŞ, İ. Et Al. 2018. Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate. International Congress on Engineering and Architecture (ENAR-2018) .

ALTUNTAŞ, İ., DEMİR, İ., KIZILBULUT, A. A., Bulut, B., & ELAGÖZ, S., (2018). Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate . International Congress on Engineering and Architecture (ENAR-2018)

ALTUNTAŞ, İSMAİL Et Al. "Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate," International Congress on Engineering and Architecture (ENAR-2018), 2018

ALTUNTAŞ, İSMAİL Et Al. "Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate." International Congress on Engineering and Architecture (ENAR-2018) , 2018

ALTUNTAŞ, İ. Et Al. (2018) . "Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate." International Congress on Engineering and Architecture (ENAR-2018) .

@conferencepaper{conferencepaper, author={İSMAİL ALTUNTAŞ Et Al. }, title={Defect Reduction in GaN Epilayer With Different V/III Ratio Grown On Patterned Sapphire Substrate}, congress name={International Congress on Engineering and Architecture (ENAR-2018)}, city={}, country={}, year={2018}}