Demir, I. Et Al. 2021. Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers. SEMICONDUCTORS , vol.55, no.10 , 816-822.

Demir, I., Altuntas, İ., & Elagoz, S., (2021). Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers. SEMICONDUCTORS , vol.55, no.10, 816-822.

Demir, I, İSMAİL ALTUNTAŞ, And S. Elagoz. "Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers," SEMICONDUCTORS , vol.55, no.10, 816-822, 2021

Demir, I Et Al. "Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers." SEMICONDUCTORS , vol.55, no.10, pp.816-822, 2021

Demir, I. Altuntas, İ. And Elagoz, S. (2021) . "Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers." SEMICONDUCTORS , vol.55, no.10, pp.816-822.

@article{article, author={I Demir Et Al. }, title={Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers}, journal={SEMICONDUCTORS}, year=2021, pages={816-822} }