Ozturk, E. Et Al. 2008. Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.41, no.3 , 195-200.

Ozturk, E., Bahar, M. K., & Sokmen, I., (2008). Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.41, no.3, 195-200.

Ozturk, EMİNE, MUSTAFA KEMAL BAHAR, And I. Sokmen. "Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness," EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.41, no.3, 195-200, 2008

Ozturk, EMİNE Et Al. "Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness." EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.41, no.3, pp.195-200, 2008

Ozturk, E. Bahar, M. K. And Sokmen, I. (2008) . "Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness." EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , vol.41, no.3, pp.195-200.

@article{article, author={EMİNE ÖZTÜRK Et Al. }, title={Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness}, journal={EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS}, year=2008, pages={195-200} }