DOĞAN, H. Et Al. 2016. ABC method analysis for the Capacitance Voltage characteristic of Ni n GaAS In schottky barrier diode. 12th International Nanoscience and Nanotechnology Conference .

DOĞAN, H., KOÇKANAT, S., & ÜNSAL ÇELİMLİ, D. B., (2016). ABC method analysis for the Capacitance Voltage characteristic of Ni n GaAS In schottky barrier diode . 12th International Nanoscience and Nanotechnology Conference

DOĞAN, HÜLYA, SERDAR KOÇKANAT, And DERYA BETÜL ÜNSAL ÇELİMLİ. "ABC method analysis for the Capacitance Voltage characteristic of Ni n GaAS In schottky barrier diode," 12th International Nanoscience and Nanotechnology Conference, 2016

DOĞAN, HÜLYA Et Al. "ABC method analysis for the Capacitance Voltage characteristic of Ni n GaAS In schottky barrier diode." 12th International Nanoscience and Nanotechnology Conference , 2016

DOĞAN, H. KOÇKANAT, S. And ÜNSAL ÇELİMLİ, D. B. (2016) . "ABC method analysis for the Capacitance Voltage characteristic of Ni n GaAS In schottky barrier diode." 12th International Nanoscience and Nanotechnology Conference .

@conferencepaper{conferencepaper, author={HÜLYA DOĞAN Et Al. }, title={ABC method analysis for the Capacitance Voltage characteristic of Ni n GaAS In schottky barrier diode}, congress name={12th International Nanoscience and Nanotechnology Conference}, city={}, country={}, year={2016}}