Ozturk, E. Et Al. 2001. Electronic properties of Si delta-doped GaAs under an applied electric field. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.6 , 421-426.

Ozturk, E., Ergun, Y., Sari, H., & Sokmen, I., (2001). Electronic properties of Si delta-doped GaAs under an applied electric field. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.6, 421-426.

Ozturk, EMİNE Et Al. "Electronic properties of Si delta-doped GaAs under an applied electric field," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.6, 421-426, 2001

Ozturk, EMİNE Et Al. "Electronic properties of Si delta-doped GaAs under an applied electric field." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.6, pp.421-426, 2001

Ozturk, E. Et Al. (2001) . "Electronic properties of Si delta-doped GaAs under an applied electric field." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.6, pp.421-426.

@article{article, author={EMİNE ÖZTÜRK Et Al. }, title={Electronic properties of Si delta-doped GaAs under an applied electric field}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2001, pages={421-426} }