Ozturk, E. And Sokmen, I. 2004. Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models. CHINESE PHYSICS LETTERS , vol.21, no.5 , 930-933.

Ozturk, E., & Sokmen, I., (2004). Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models. CHINESE PHYSICS LETTERS , vol.21, no.5, 930-933.

Ozturk, EMİNE, And I Sokmen. "Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models," CHINESE PHYSICS LETTERS , vol.21, no.5, 930-933, 2004

Ozturk, EMİNE And Sokmen, I. "Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models." CHINESE PHYSICS LETTERS , vol.21, no.5, pp.930-933, 2004

Ozturk, E. And Sokmen, I. (2004) . "Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models." CHINESE PHYSICS LETTERS , vol.21, no.5, pp.930-933.

@article{article, author={EMİNE ÖZTÜRK And author={I Sokmen}, title={Intersubband transitions of Si delta-doped GaAs layer for different donor distribution models}, journal={CHINESE PHYSICS LETTERS}, year=2004, pages={930-933} }