DOĞAN, H. Et Al. 2008. Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes. Microelectronic Engineering , vol.85, no.4 , 655-658.

DOĞAN, H., YILDIRIM, N., & Turut, A., (2008). Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes. Microelectronic Engineering , vol.85, no.4, 655-658.

DOĞAN, Hatice, Nimet YILDIRIM, And HÜLYA DOĞAN. "Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes," Microelectronic Engineering , vol.85, no.4, 655-658, 2008

DOĞAN, Hatice Et Al. "Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes." Microelectronic Engineering , vol.85, no.4, pp.655-658, 2008

DOĞAN, H. YILDIRIM, N. And Turut, A. (2008) . "Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes." Microelectronic Engineering , vol.85, no.4, pp.655-658.

@article{article, author={Hatice DOĞAN Et Al. }, title={Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes}, journal={Microelectronic Engineering}, year=2008, pages={655-658} }