ALTUNTAŞ, İ. Et Al. 2017. Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates. III International Conference on Engineering and Natural Science (ICENS) , (Budapest, Hungary).

ALTUNTAŞ, İ., DEMİR, İ., KIZILBULUT, A. A., BULUT, B., & ELAGÖZ, S., (2017). Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates . III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary

ALTUNTAŞ, İSMAİL Et Al. "Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates," III International Conference on Engineering and Natural Science (ICENS), Budapest, Hungary, 2017

ALTUNTAŞ, İSMAİL Et Al. "Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates." III International Conference on Engineering and Natural Science (ICENS) , Budapest, Hungary, 2017

ALTUNTAŞ, İ. Et Al. (2017) . "Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates." III International Conference on Engineering and Natural Science (ICENS) , Budapest, Hungary.

@conferencepaper{conferencepaper, author={İSMAİL ALTUNTAŞ Et Al. }, title={Structural Comparison of Epitaxially Grown GaN Layer on Conventional Sapphire and Patterned Sapphire Substrates}, congress name={III International Conference on Engineering and Natural Science (ICENS)}, city={Budapest}, country={Hungary}, year={2017}}