Ungan, F. Et Al. 2011. The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , vol.44, no.2 , 515-520.

Ungan, F., Kasapoglu, E., Duque, C. A., Sari, H., & Sokmen, I., (2011). The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , vol.44, no.2, 515-520.

Ungan, FATİH Et Al. "The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well," PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , vol.44, no.2, 515-520, 2011

Ungan, FATİH Et Al. "The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well." PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , vol.44, no.2, pp.515-520, 2011

Ungan, F. Et Al. (2011) . "The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well." PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , vol.44, no.2, pp.515-520.

@article{article, author={FATİH UNGAN Et Al. }, title={The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well}, journal={PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES}, year=2011, pages={515-520} }