ÖZTÜRK, E. And SÖKMEN, İ. 2008. Electronic properties of p-type delta-doped GaAs structure under electric field. CHINESE PHYSICS LETTERS , vol.25, no.4 , 1415-1418.

ÖZTÜRK, E., & SÖKMEN, İ., (2008). Electronic properties of p-type delta-doped GaAs structure under electric field. CHINESE PHYSICS LETTERS , vol.25, no.4, 1415-1418.

ÖZTÜRK, EMİNE, And İsmail SÖKMEN. "Electronic properties of p-type delta-doped GaAs structure under electric field," CHINESE PHYSICS LETTERS , vol.25, no.4, 1415-1418, 2008

ÖZTÜRK, EMİNE And SÖKMEN, İsmail. "Electronic properties of p-type delta-doped GaAs structure under electric field." CHINESE PHYSICS LETTERS , vol.25, no.4, pp.1415-1418, 2008

ÖZTÜRK, E. And SÖKMEN, İ. (2008) . "Electronic properties of p-type delta-doped GaAs structure under electric field." CHINESE PHYSICS LETTERS , vol.25, no.4, pp.1415-1418.

@article{article, author={EMİNE ÖZTÜRK And author={İsmail SÖKMEN}, title={Electronic properties of p-type delta-doped GaAs structure under electric field}, journal={CHINESE PHYSICS LETTERS}, year=2008, pages={1415-1418} }