Kasapoğlu E. (Executive), Öztürk E., Al E. B.
Project Supported by Higher Education Institutions, BAP Research Project, 2016 - 2016
In this study, the effects of the external fields on the binding energies of the ground and some excited states of the shallow donor impurities and also the total absorption coefficient for the optical transitions between the bound electronic levels in the asymmetric parabolic GaAs/Ga1-xAlxAs quantum well. The binding energies were obtained using the effective-mass approximation within a variational scheme. The optical transitions (linear, nonlinear and total absorption coefficients) for the transitions between any two electronic energy levels were calculated by using density matrix formalism and the perturbation expansion method.