Influence of temperature on the electronic properties of Si delta-doped GaAs structures


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Ozturk E. , Ergun Y., Sari H. , Sokmen I.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.21, no.2, pp.97-101, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 21 Issue: 2
  • Publication Date: 2003
  • Doi Number: 10.1051/epjap:2002111
  • Title of Journal : EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
  • Page Numbers: pp.97-101

Abstract

We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and the donor thickness. In this study, nonuniform distribution is different from Gaussian distribution used by other authors. From the self-consistent calculation, we have seen that at room temperature carriers which appear due to the impurity atoms are more efficient than temperature on the subband structure.