ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPED GaAs/Al-x Ga1-xAs SYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD

Ungan F., Kasapoglu E., Sari H., Sokmen I.

SURFACE REVIEW AND LETTERS, cilt.16, sa.1, ss.105-110, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16 Sayı: 1
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1142/s0218625x09012366
  • Dergi Adı: SURFACE REVIEW AND LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.105-110
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and asymmetric GaAs/Al0.33Ga0.67As double quantum wells. Electronic properties of the system are determined by the solving the Schrodinger and Poisson equations self-consistently in the effective-mass approximation. The application of an electric field in the growth direction of the system causes a polarization of the carrier distribution and shifts the sub-band energies, which may be used to control and modulate intensity output devices. In an asymmetric double-quantum-well structure, the effects mentioned above appear more clearly.