Influence of Indium and Arsenic composition on structural properties of InGaAsSb/AlGaAsSb multi-quantum wells grown by molecular beam epitaxy

Ergürhan A. A., Arpapay B., Erenoğlu S. E., Kulakcı M., ALAYDİN B. Ö., ALTUN D., ...Daha Fazla

Journal of Crystal Growth, cilt.670, 2025 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 670
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.jcrysgro.2025.128330
  • Dergi Adı: Journal of Crystal Growth
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Composition, InGaAsSb, Molecular beam epitaxy, Multiple quantum wells, Quaternary alloy, Surface defects
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

InGaAsSb/AlGaAsSb multiple quantum well (MQW) structures, with their narrow band gap quaternary compositions, are well suited for devices operating in the 2–3 µm mid-infrared spectral region. In this study, to investigate the effects of compositional variation on structural properties, twenty-period MQW structures were grown by molecular beam epitaxy on (100) GaSb substrates. It was demonstrated that varying the In and As concentrations while keeping the V/III beam equivalent pressure ratio constant significantly influenced the surface morphology due to defect formation. It was found that in the samples with In concentrations ranging from 30 to 44%, low As content resulted in an increase in the number of surface defects. However, a smooth, defect-free surface and improved crystal quality were achieved at 44% In content when the As concentration in the QWs was 14% or higher. These results highlight the importance of precise compositional tuning for achieving high structural quality in mid-infrared MQW devices.