Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells


Alaydin B. Ö. , Ozturk E. , Elagoz S.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol.32, no.5, 2018 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 32 Issue: 5
  • Publication Date: 2018
  • Doi Number: 10.1142/s0217979218500522
  • Title of Journal : INTERNATIONAL JOURNAL OF MODERN PHYSICS B

Abstract

In this paper, the optical and electronic properties of asymmetric triple quantum well (ATQW) structures are studied depending on the indium concentrations while quantum well (QW) thicknesses and barrier widths are kept constant. Calculation of electronic properties are done within the framework of the effective mass approximation. The indium concentrations in left quantum well (LQW) and right quantum well (RQW) are varied in order to see the change of energy levels. Then, interband transition energies, wavelengths, oscillator strengths and radiative decay times are determined depending on barrier height. The scope of this study, for the first time in the literature, covers converged interband transition energies for the asymmetric quantum well structures.