Photoionization cross-section and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires

Yesilgul U., Kasapoglu E., Sari H., Sokmen I.

SOLID STATE COMMUNICATIONS, cilt.151, sa.17, ss.1175-1178, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 151 Sayı: 17
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.ssc.2011.04.029
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1175-1178
  • Anahtar Kelimeler: Quantum-well wires, Impurity, Photoionization, BAND PARAMETERS, OPTICAL GAIN, WELL WIRE, GAN, RANGE, FIELD
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy. (C) 2011 Elsevier Ltd. All rights reserved.