The potential profile and the energy levels of the heavy holes (hh) and light holes (lh) in graded quantum wells under an intense laser field are theoretically calculated within the framework of the effective mass approximation. The results obtained show that the energy levels can significantly be modified and controlled by intense laser field and potential height. The effect of the laser field and potential height on the energy difference changes the degree of confinement and the energy level numbers. Also, we have seen a replacement between the lh2 and hh4 sub-bands whenever the laser field reaches almost alpha(0) = 20 A for our parameters. We hope that the controlled effects of the confining potential resulting from the applied laser field will provide important improvement in new semiconductor device applications.