Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

Sharif M. N., Khan M. A., Wali Q., DEMİR İ., Wang F., Liu Y.

OPTICS AND LASER TECHNOLOGY, cilt.152, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 152
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.optlastec.2022.108156
  • Dergi Adı: OPTICS AND LASER TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Deep-ultraviolet laser diode, Compositional grading of AlGaN, Cladding layer, Waveguide layer, LIGHT-EMITTING-DIODES, INJECTION
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Achieving high threshold current density and high optical confinement are big challenges in the realization of high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet (DUV) laser diode (LD). In this work, compositional Al-grading of AlGaN layers is used to increase the optical confinement factor (OCF), carrier injection efficiency, gain, and emission power of the DUV LD. Compositional grading of waveguides (WGs) layer, electron blocking layer (EBL), and cladding layers (CLs) demonstrated that the device characteristic can be improved. By using compositional Al-grading of AlGaN p-WG, EBL, p-CL along with n-WG and n-CL, 17.4% OCF, 94.4 mW emission power, and 1369 m(-1) gain at 267 nm peak emission wavelength are achieved. These improvements are attributed to the reduced threshold current density as well as using better optical confinement scheme in the DUV LD.