Close oxygen coupled low-pressure chemical vapor deposition growth of high quality beta - Ga2O3 on sapphire

AKYOL F., DEMİR İ.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.146, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 146
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.mssp.2022.106645
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

We report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (-201) oriented beta-Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the main tube, O-2 could be delivered to the substrate surface which enables effective control of growth regime. Under optimized conditions (Ga-rich and near stoichiometric feed rate), step flow growth was obtained with X-ray rocking curve full-width at half maximum of 0.09 degrees and 0.20 degrees at a growth rate of 0.49 mu m/h and 3.42 mu m/h, respectively. On the other hand, oxygen-rich growth at high growth rates produced in-plane rotational domains. In addition, the alignment of single crystal (-201) beta-Ga2O3 with respect to the sapphire offcut direction was revealed such that [-20-1] beta-Ga2O3 is along [11-20] (offcut direction) sapphire. This study demonstrates the potential of the versatile COC-LPCVD system on the thin film growth of high quality beta-Ga2O3.