Effect of position-dependent effective mass on donor impurity- and exciton-related electronic and optical properties of 2D Gaussian quantum dots

Sari H., Kasapoglu E., Sakiroglu S., Sokmen I., Duque C. A.

EUROPEAN PHYSICAL JOURNAL PLUS, cilt.137, sa.3, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 137 Sayı: 3
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1140/epjp/s13360-022-02491-3
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL PLUS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, INSPEC
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Using the compact density matrix scheme and the effective mass approximation, we study the influence of position-dependent electron and heavy-hole mass distributions on the impurity-related electronic properties, excitonic binding, and intersubband electron transitions in a two-dimensional quantum dot with Gaussian potential. The electronic structure has been obtained by using the two-dimensional diagonalization method. The obtained results show the significant influence of the functional form of the spatial mass distribution and structural geometry on the accurate determination of the impurity-related electronic structure, optical response, electron-hole overlap, and, therefore, the carrier lifetimes in the optoelectronic devices based on quantum dots.