Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well

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Atıf İçin Kopyala

Duque C. A., Mora-Ramos M. E., Kasapoglu E., Sari H., Sokmen I.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.249, sa.1, ss.118-127, 2012 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 249 Sayı: 1
• Basım Tarihi: 2012
• Doi Numarası: 10.1002/pssb.201147250
• Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.118-127
• Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effects of intense laser radiation on the exciton states in GaAs-Ga1xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton-related photoluminescence peak, and the carriers overlap integral are presented for several configurations of the quantum well size, the strength of the applied electric fields, and the incident laser radiation.