Electron-related nonlinearities in GaAs-Ga1-xAlxAs double quantum wells under the effects of intense laser field and applied electric field

Mora-Ramos M. E., Duque C. A., Kasapoglu E., Sari H., Sokmen I.

JOURNAL OF LUMINESCENCE, cilt.135, ss.301-311, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 135
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.jlumin.2012.09.025
  • Dergi Adı: JOURNAL OF LUMINESCENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.301-311
  • Anahtar Kelimeler: Double quantum well, Intense laser field, Nonlinear optics, Electric field, 3RD-HARMONIC GENERATION, OPTICAL-ABSORPTION, IMPURITY STATES, MAGNETIC-FIELD, TRANSITIONS, RADIATION, SUPERLATTICES, EXCITON, SINGLE, DONORS
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The combined effects of intense laser radiation and applied electric fields on the intersubband-related linear and nonlinear optical properties in GaAs-based quantum wells are discussed. It is shown that for asymmetric double quantum well, the increasing laser field intensity causes progressive redshifts in the peak positions of the second and third harmonic coefficients. However, the resonant peaks of the nonlinear optical rectification can suffer a blueshift or a redshift, depending on the laser strengths. The same feature appears in the case of the resonant peaks corresponding to the total coefficients of optical absorption and relative change in the refractive index. (c) 2012 Elsevier B.V. All rights reserved.