Electron-related nonlinearities in GaAs-Ga1-xAlxAs double quantum wells under the effects of intense laser field and applied electric field


Mora-Ramos M. E. , Duque C. A. , Kasapoglu E. , Sari H. , Sokmen I.

JOURNAL OF LUMINESCENCE, cilt.135, ss.301-311, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 135
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.jlumin.2012.09.025
  • Dergi Adı: JOURNAL OF LUMINESCENCE
  • Sayfa Sayıları: ss.301-311

Özet

The combined effects of intense laser radiation and applied electric fields on the intersubband-related linear and nonlinear optical properties in GaAs-based quantum wells are discussed. It is shown that for asymmetric double quantum well, the increasing laser field intensity causes progressive redshifts in the peak positions of the second and third harmonic coefficients. However, the resonant peaks of the nonlinear optical rectification can suffer a blueshift or a redshift, depending on the laser strengths. The same feature appears in the case of the resonant peaks corresponding to the total coefficients of optical absorption and relative change in the refractive index. (c) 2012 Elsevier B.V. All rights reserved.