Akademik Veri Yönetim Sistemi
Applied Physics A: Materials Science and Processing, cilt.131, sa.9, 2025 (SCI-Expanded)
A theoretical analysis of the intersubband optoelectronic properties in a symmetric modulation-doped GaN/In0.2Ga0.8N/GaN single quantum well was carried out using the self-consistent calculation method within the framework of the effective mass. The system is modeled assuming a zinc-blende GaN crystal structure, which lacks internal polarization fields. The electronic structure was analyzed by incorporating hydrogenic impurity states under an external electric field. The one-dimensional Schrödinger equation was solved using the local density approximation, along with a solution of the Poisson equation. The iterative solution of the density matrix formalism under the approximation of a two-level system taking into account the impurity states was utilized to investigate the optical absorption and refraction characteristics. Calculations were conducted to explore the role of the doping concentration on the binding energies and the linear and third-order nonlinear optical properties. Our numerical findings showed that the confinement profile was modulated to achieve an asymmetric deep well with a central band bending under the simultaneous presence of donor dopants and the electric field. The dependence of the binding energies on the impurity position revealed the remarkable potency of confinement and tunneling effects. The analysis of the binding energies also indicated enhancement with increasing the doping concentration, while it was found to drop after the application of the electric field. The increase in the doping concentration caused a decline in the transition energies and an increase in dipole matrix elements. However, an opposite effect was observed when the applied field was present. The numerical outcomes demonstrated that the third-order nonlinear optical responses were significantly sensitive to a complicated contribution of the doping concentration and the presence of the electric field. Such a result might serve as a means to modulate the transition energies and the optical characteristics beneficial to the design of the optoelectronic equipment.