ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPED GaAs/Al-x Ga1-xAs SYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD


Ungan F. , Kasapoglu E. , Sari H. , Sokmen I.

SURFACE REVIEW AND LETTERS, cilt.16, ss.105-110, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 16 Konu: 1
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1142/s0218625x09012366
  • Dergi Adı: SURFACE REVIEW AND LETTERS
  • Sayfa Sayıları: ss.105-110

Özet

In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and asymmetric GaAs/Al0.33Ga0.67As double quantum wells. Electronic properties of the system are determined by the solving the Schrodinger and Poisson equations self-consistently in the effective-mass approximation. The application of an electric field in the growth direction of the system causes a polarization of the carrier distribution and shifts the sub-band energies, which may be used to control and modulate intensity output devices. In an asymmetric double-quantum-well structure, the effects mentioned above appear more clearly.