The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires


Yesilgul U., Sakiroglu S., Kasapoglu E. , Sari H. , Soekmen I.

SUPERLATTICES AND MICROSTRUCTURES, vol.48, no.1, pp.106-113, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 48 Issue: 1
  • Publication Date: 2010
  • Doi Number: 10.1016/j.spmi.2010.04.003
  • Title of Journal : SUPERLATTICES AND MICROSTRUCTURES
  • Page Numbers: pp.106-113

Abstract

Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure. (c) 2010 Elsevier Ltd. All rights reserved.