The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires

Yesilgul, U.; Sakiroglu, S.; Kasapoglu, ESİN; Sari, HÜSEYİN; Soekmen, I.

doi:10.1016/j.spmi.2010.04.003

The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires

Yesilgul U., Sakiroglu S., Kasapoglu E., Sari H., Soekmen I.

SUPERLATTICES AND MICROSTRUCTURES, cilt.48, sa.1, ss.106-113, 2010 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 48 Sayı: 1
Basım Tarihi: 2010
Doi Numarası: 10.1016/j.spmi.2010.04.003
Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.106-113
Anahtar Kelimeler: Photoionization, Quantum-well wires, Impurity, SHALLOW DONOR IMPURITIES, STRONG MAGNETIC-FIELD, GAAS
Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure. (c) 2010 Elsevier Ltd. All rights reserved.