The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field

Kasapoglu, ESİN; Duque, C.; Sakiroglu, S.; Sari, HÜSEYİN; Sokmen, I.

doi:10.1016/j.physe.2011.03.016

The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field

Kasapoglu E., Duque C. A., Sakiroglu S., Sari H., Sokmen I.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.43, sa.8, ss.1427-1432, 2011 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 43 Sayı: 8
Basım Tarihi: 2011
Doi Numarası: 10.1016/j.physe.2011.03.016
Dergi Adı: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.1427-1432
Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states. (C) 2011 Elsevier B.V. All rights reserved.