Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field


Kasapoglu E. , Sari H. , Balkan N., Sokmen I., Ergun Y.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.15, no.2, pp.219-224, 2000 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 15 Issue: 2
  • Publication Date: 2000
  • Doi Number: 10.1088/0268-1242/15/2/324
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Page Numbers: pp.219-224

Abstract

The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic field, as a function of the potential symmetry, size of the quantum well and coupling parameter of the wells. We show that by increasing the applied magnetic field one can obtain large binding between electrons and holes which is similar to the change in the dimensions of the structure. This behaviour in the excitonic binding for different wells and barrier geometries can be used to study these systems in regions of interest, without the need for the growth of many different samples.