Investigation of nonlinear optical properties in GaAs/GaAlAs quantum well with modified Lennard-Jones potential: Role of static electromagnetic fields, intense laser radiation and structure parameters

Hasanirokh K., AL E. B., TÜZEMEN A. T., SAYRAÇ M., Sayrac H., UNGAN F.

Photonics and Nanostructures - Fundamentals and Applications, cilt.65, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 65
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.photonics.2025.101403
  • Dergi Adı: Photonics and Nanostructures - Fundamentals and Applications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC
  • Anahtar Kelimeler: Electric and magnetic field, Intense laser field, Non-linear optical rectification, Quantum well, Second and third harmonic generations
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

Through this theoretical investigation, we examine the role of various factors (electric field, magnetic field and intense laser field) on GaAs/GaAlAs quantum well with modified Lennard-Jones potential and their influence on the nonlinear optical rectification, second harmonic generation, and third harmonic generation. First, we calculate the wave functions and energy levels for the four lowest confined states in the structure by solving the Schrödinger equation via the diagonalization method in the framework of the effective mass and parabolic band approximations. The optical calculations utilize the density matrix formalism and the iterative method to express the different degrees of dielectric susceptibility. The intense laser effects on the system are calculated via the Floquet method, which modifies the confinement potential due to the heterostructure. The major outcomes of this quantitative research demonstrate a strong dependence between the mentioned parameters and optical properties. Magnetic field, electric field, intense laser field and potential change drastically the energy levels and matrix elements and thus modifies the optical characteristics. By appropriately manipulating the variables we can not only regulate the optical properties of the quantum well but also help developers in the creation of novel optoelectronic devices.