Optical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dots

Alejandro Vinasco J., Alejandro Londono M., Leon Restrepo R., Eduardo Mora-Ramos M., Feddi E. M., Radu A., ...Daha Fazla

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.255, sa.4, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 255 Sayı: 4
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1002/pssb.201700470
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: binding energy, donor impurity, ellipsoidal quantum dot, finite element method, GaAs, HYDROGENIC DONOR, BINDING-ENERGY, IMPURITY, PRESSURE, SPECTRA, FIELD
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity center and an applied electric field are particularly taken into account. Electron-impurity energies are reported as functions of both the geometry of the quantum dot and the applied field intensity, whereas temperature effects are also included. The analysis of electron-impurity intersubband transitions allows the investigation of the light absorption response of the system.