Akademik Veri Yönetim Sistemi
Materials Science in Semiconductor Processing, cilt.183, 2024 (SCI-Expanded)
First, we experimentally measure the concentration of holes of the piezoelectric semiconductor (PSC) Gallium arsenide (GaAs) material based on the Hall effect measurement. We then numerically calculate the Lamb wave characteristics in a p-type PSC GaAs plate using this measured value of the concentration of holes (estimated at approximately p0=3.5431×1025m−3). To guarantee the coupling effect that makes the Lamb wave a piezo-active wave, the GaAs crystal is oriented in a specific orientation of (110) plane. Ordinary differential equation (ODE) method is employed to calculate the dispersion curves, 3D view of the mechanical displacements, 3D view of the electric potential and 3D view of the concentrations of holes. Results show that the appearance of the complex branches of the Lamb modes coincides with the vanishing of the imaginary part of the wavevector (Im(k1)) to zero, which is a very remarkable finding that has not been discussed in previous studies. Meanwhile, these complex branches start exactly at the point of Zero-group-velocity (ZGV). Moreover, the present work highlights the hole drift characteristics of PSC GaAs and provides a critical comparative discussion with those published by (Zhu et al., 2018) for the PSC ZnO plate. Accordingly, the “Screening effect” phenomenon that is based on the positive holes in the negative electric potential region is discussed. The present results provide a theoretical and fundamental guidance on the development of smart devices based on the PSC GaAs material.