AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn


DEMİR İ. , Kocak Y., KASAPOĞLU A. E. , Razeghi M., GÜR E., Elagoz S.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.34, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 34 Konu: 7
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1088/1361-6641/ab2782
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Özet

We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed codoping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.