Strain effect on the intraband absorption coefficient for spherical CdSe/CdS/ZnSe core–shell–shell quantum dots

Rodríguez-Magdaleno K., Pérez-Álvarez R., UNGAN F., Martínez-Orozco J.

Materials Science in Semiconductor Processing, cilt.141, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 141
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.mssp.2021.106400
  • Dergi Adı: Materials Science in Semiconductor Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Anahtar Kelimeler: Strain effect, Absorption coefficient, Spherical quantum dot, Intraband transitions, OPTICAL-ABSORPTION, ELECTRONIC-STRUCTURE, ENERGY, HETEROSTRUCTURE, NANOCRYSTALS, TRANSITIONS, STATES, FIELD, CDSE
  • Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

© 2021 Elsevier LtdIn this work, we theoretically calculated the intraband absorption coefficient (IAC) between the 1s and 1p conduction band states for a spherical core/shell/shell quantum dot (CSS-QD) as function of inner and outer shells’ sizes with and without the presence of strain effect. The electronic structure for the system is computed in the effective mass approximation framework and the strain effect is considered on the continuum elasticity model. We found out that as we compared the strained and the unstrained system, the former causes that the IAC undergoes a small redshift. A similar behavior occurs as the inner and outer shell size increase. The results show that the strain effect is an important factor that will be considered in these nanostructure type. The incorporation of inner and outer shells allowed us to extend some fractions of eV into the absorption spectrum that could be interesting as a mechanism to control the IAC device design.