Akademik Veri Yönetim Sistemi
European Physical Journal Plus, cilt.138, sa.11, 2023 (SCI-Expanded)
The InP/InGaAs triple quantum well (TQW) structure is of significant interest to researchers studying new generations of semiconductor optoelectronic devices, as it offers valuable opportunities for controlling and enhancing the nonlinear optical processes in these devices. By applying external fields, such as hydrostatic pressure (P), temperature (T), and external electric field (F), the nonlinear optical properties of the InP/InGaAs TQW structure can be controlled and manipulated. This study investigates the effects of structure parameters of quantum well barriers and well widths (Lb and Lw) and the aforementioned external perturbations on the nonlinear optical properties, including the coefficients of nonlinear optical rectification (NOR), second-harmonic generation (SHG), and third-harmonic generation (THG) of the TQW structure. The energy eigenvalues and eigenfunctions of the confined single electron in TQW are obtained using the diagonalization method within the framework of the effective mass and parabolic band approximations. Moreover, employing the compact density matrix approximation for calculating the coefficients of the nonlinear optical response provides a computationally efficient way to assess the nonlinear optical properties of the TQW structure. The numerical results have significant potential to advance the understanding and design of semiconductor optoelectronic devices based on the InP/InGaAs triple quantum well structure. Exploring the effects of different parameters and external fields can lead to deeper insights into the underlying physics and may unlock new opportunities for developing innovative and high-performance devices.