OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

Ungan, FATİH; Yesilgul, U.; Kasapoglu, ESİN; Sari, HÜSEYİN; Sokmen, I.

doi:10.1142/s0217979212500130

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

Atıf İçin Kopyala

Ungan F., Yesilgul U., Kasapoglu E., Sari H., Sokmen I.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.26, sa.6, 2012 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 26 Sayı: 6
Basım Tarihi: 2012
Doi Numarası: 10.1142/s0217979212500130
Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sivas Cumhuriyet Üniversitesi Adresli: Evet

Özet

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1-2) transition and the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.