OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD


Ungan F. , Yesilgul U., Kasapoglu E. , Sari H. , Sokmen I.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol.26, no.6, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 26 Issue: 6
  • Publication Date: 2012
  • Doi Number: 10.1142/s0217979212500130
  • Title of Journal : INTERNATIONAL JOURNAL OF MODERN PHYSICS B

Abstract

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1-2) transition and the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.