Second and third harmonic generation in “6–n” GaAs/AlGaAs quantum wells: Influence of asymmetry and external fields
Photonics and Nanostructures - Fundamentals and Applications, cilt.71, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 71
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.photonics.2026.101550
- Dergi Adı: Photonics and Nanostructures - Fundamentals and Applications
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, INSPEC
- Anahtar Kelimeler: GaAs/AlGaAs quantum wells, Intense laser field, Magnetic field, Second-harmonic generation (SHG), Third-harmonic generation (THG), Electric field
- Sivas Cumhuriyet Üniversitesi Adresli: Evet
Özet
In this study, we examine the nonlinear optical response of GaAs/AlGaAs quantum wells (QWs) by employing a tunable “6-n” confinement potential. Given that the second harmonic generation (SHG) coefficient inherently vanishes in centrosymmetric systems, we engineering structural asymmetry into the structure by setting the structural asymmetry parameter (n) to 1, 3, and 5. Electronic states were computed under external electric, magnetic, and intense laser fields using the finite element method (FEM); subsequently, we used these states to systematically calculate the SHG and third harmonic generation (THG) coefficients. Our findings demonstrate that the n parameter acts as a pivotal structural mechanism for tuning quantum confinement and electron localization. Specifically, modulating the degree of asymmetry significantly enhances the sensitivity of the QW to external fields. This amplified sensitivity enables versatile and precise control over both the magnitudes and the red/blueshifts of the harmonic peaks. Collectively, this study highlights the substantial potential of asymmetric “6-n” QWs as highly efficient, tunable components for next-generation nonlinear optoelectronic devices and nanophotonic frequency converters.